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FDMS3662

FDMS3662

FDMS3662

ON Semiconductor

FDMS3662 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDMS3662 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 14.8MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormFLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.8m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 8.9A
Threshold Voltage 3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 49A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 90A
Nominal Vgs 3.5 V
Height 1.05mm
Length 5mm
Width 6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2776 items

Pricing & Ordering

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FDMS3662 Product Details

FDMS3662 Description


The FDMS3662 N-Channel MOSFET is made with Fairchild Semiconductor's innovative Power Trench process, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance.


FDMS3662 Features


At Vgs = 10V, Id = 8.9A, Maxds(o n) = 14.8mQ.

MSL1 durable package design with advanced packaging and silicon combination for low rDS(on).

Compliant with RoHS


FDMS3662 Applications


DC - DC Con version

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