FDMS3662 Description
The FDMS3662 N-Channel MOSFET is made with Fairchild Semiconductor's innovative Power Trench process, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance.
FDMS3662 Features
At Vgs = 10V, Id = 8.9A, Maxds(o n) = 14.8mQ.
MSL1 durable package design with advanced packaging and silicon combination for low rDS(on).
Compliant with RoHS
FDMS3662 Applications
DC - DC Con version