FDMS8570S

new-10%

Manufacturer part number:FDMS8570S

Manufacturer:ON Semiconductor

Description:MOSFET 25/12V Dual Cool PowerTrench MOSFET

Case Package:SOT-23

Datasheet:FDMS8570S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	90mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®, SyncFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.5W Ta 48W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3.3W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.8m Ω @ 24A, 10V
Vgs(th) (Max) @ Id	2.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2825pF @ 13V
Current - Continuous Drain (Id) @ 25°C	24A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	425nC @ 10V
Rise Time	4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	28A
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	60A
Drain to Source Breakdown Voltage	25V
Avalanche Energy Rating (Eas)	45 mJ
Height	1.05mm
Length	5.1mm
Width	5.85mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free