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FQPF13N10

  • FQPF13N10
  • FQPF13N10

FQPF13N10

FQPF13N10

ON Semiconductor

FQPF13N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQPF13N10 Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 12.8A
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Power Dissipation 30W
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 4.35A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.7A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 8.7A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 100V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.61000 $0.61
500 $0.6039 $301.95
1000 $0.5978 $597.8
1500 $0.5917 $887.55
2000 $0.5856 $1171.2
2500 $0.5795 $1448.75
FQPF13N10 Product Details

FQPF13N10 Description


FQPF13N10 is a 100v N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF13N10 is well suited for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.



FQPF13N10 Features


  • 8.7A, 100V, RDS(on) = 0.18? @VGS = 10 V

  • Low gate charge ( typical 12 nC)

  • Low Crss ( typical 20 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability

  • 175°C maximum junction temperature rating



FQPF13N10 Applications


  • Audio amplifier,

  • High-efficiency switching DC/DC converters

  • DC motor control


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