FQPF13N10 Description
FQPF13N10 is a 100v N-Channel MOSFET. The N-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF13N10 is well suited for low voltage applications such as audio amplifiers, high-efficiency switching DC/DC converters, and DC motor control.
FQPF13N10 Features
8.7A, 100V, RDS(on) = 0.18? @VGS = 10 V
Low gate charge ( typical 12 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
FQPF13N10 Applications
