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FDMS86103L

FDMS86103L

FDMS86103L

ON Semiconductor

N-Channel Tape & Reel (TR) 8m Ω @ 12A, 10V ±20V 3710pF @ 50V 60nC @ 10V 8-PowerTDFN

SOT-23

FDMS86103L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 68.1mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 104W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3710pF @ 50V
Current - Continuous Drain (Id) @ 25°C 12A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 49A
Threshold Voltage 1.9V
JEDEC-95 Code MO-240AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 1.05mm
Length 5mm
Width 6.15mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.91350 $2.7405
6,000 $0.88160 $5.2896
FDMS86103L Product Details

FDMS86103L Description


FDMS86103L is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDMS86103L is -55??C~150??C TJ and its maximum power dissipation is 2.5W. In order to reduce the on-state resistance and still preserve exceptional switching performance, this N-Channel MOSFET is made using the cutting-edge Power Trench? technology.



FDMS86103L Features


  • Shielded Gate MOSFET Technology

  • Max rDS(on) = 8 m|? at VGS = 10 V, ID = 12 A

  • Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 10 A

  • Advanced Package and Silicon combination for low rDS(on) and high efficiency

  • MSL1 robust package design

  • 100% UIL tested

  • RoHS Compliant



FDMS86103L Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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