FDD7030BL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDD7030BL Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2003
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Reach Compliance Code
compliant
Power Dissipation-Max
2.8W Ta 60W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
9.5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1425pF @ 15V
Current - Continuous Drain (Id) @ 25°C
14A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.41000
$0.41
500
$0.4059
$202.95
1000
$0.4018
$401.8
1500
$0.3977
$596.55
2000
$0.3936
$787.2
2500
$0.3895
$973.75
FDD7030BL Product Details
FDD7030BL Description
The FDD8880 is an N-channel MOSFET produced using the proprietary PowerTrench? process. The onsemi FDD8880 is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The FDD8880 has been optimized for low gate charge, low RDS (ON), and fast switching speed.
FDD7030BL Features
60 A, 30 V
RDS(ON) = 9 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
Critical DC electrical parameters specified at elevated temperature
High-performance trench technology for extremely low RDS(ON)
175°C maximum junction temperature rating
FDD7030BL Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator