FDMS8622

new-10%

Manufacturer part number:FDMS8622

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 56m Ω @ 4.8A, 10V ±20V 400pF @ 50V 7nC @ 10V 8-PowerTDFN

Case Package:SOT-23

Datasheet:FDMS8622 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	74mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	R-PDSO-N5
Number of Elements	1
Power Dissipation-Max	2.5W Ta 31W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	5.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	56m Ω @ 4.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 50V
Current - Continuous Drain (Id) @ 25°C	4.8A Ta 16.5A Tc
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Rise Time	1.7ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.1 ns
Turn-Off Delay Time	10.2 ns
Continuous Drain Current (ID)	4.8A
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.056Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	30A
Height	1.05mm
Length	5mm
Width	6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant