FDMS8670AS datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDMS8670AS Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Supplier Device Package
8-PQFN (5x6)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
2.5W Ta 78W Tc
Power Dissipation
2.5W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
3615pF @ 15V
Current - Continuous Drain (Id) @ 25°C
23A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Rise Time
5ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
23A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Input Capacitance
3.615nF
Drain to Source Resistance
3mOhm
Rds On Max
3 mΩ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.80000
$0.8
500
$0.792
$396
1000
$0.784
$784
1500
$0.776
$1164
2000
$0.768
$1536
2500
$0.76
$1900
FDMS8670AS Product Details
FDMS8670AS Description
The FDMS8670AS was created to reduce losses in applications involving power conversion. The lowest rDS(on) with outstanding switching performance has been achieved by combining improvements in silicon and package technology. Additionally, this device contains a monolithic Schottky body diode that is highly effective.
FDMS8670AS Features
Max rDS(on) = 3.0m: at VGS = 10V, ID = 23A
Max rDS(on) = 4.7m: at VGS = 4.5V, ID = 18A
Advanced Package and Silicon combination for low rDS(on) and high efficiency