BSS816NWH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
BSS816NWH6327XTSA1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
500mW Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
160m Ω @ 1.4A, 2.5V
Vgs(th) (Max) @ Id
0.75V @ 3.7μA
Input Capacitance (Ciss) (Max) @ Vds
180pF @ 10V
Current - Continuous Drain (Id) @ 25°C
1.4A Ta
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 2.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 2.5V
Vgs (Max)
±8V
Drain Current-Max (Abs) (ID)
1.4A
Drain-source On Resistance-Max
160Ohm
DS Breakdown Voltage-Min
20V
Feedback Cap-Max (Crss)
10 pF
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.07970
$0.2391
6,000
$0.07003
$0.42018
15,000
$0.06036
$0.9054
30,000
$0.05714
$1.7142
75,000
$0.05391
$4.04325
150,000
$0.04747
$7.1205
BSS816NWH6327XTSA1 Product Details
BSS816NWH6327XTSA1 Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to provide the lowest on-resistance per silicon area achievable. When HEXFET Power MOSFETs' fast switching speed and ruggedized device architecture are coupled, the result is a highly efficient device that may be used in a variety of applications.