NVB5405NT4G

new-10%

Manufacturer part number:NVB5405NT4G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 40V 16.5A 3-Pin(2+Tab) D2PAK T/R

Case Package:SOT-23

Datasheet:NVB5405NT4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	3
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3W Ta 150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	5.8m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4000pF @ 32V
Current - Continuous Drain (Id) @ 25°C	16.5A Ta 116A Tc
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	116A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	16.5A
Drain-source On Resistance-Max	0.0058Ohm
Pulsed Drain Current-Max (IDM)	280A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	800 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free