FDP2D3N10C IGBT Description

The FDP2D3N10C IGBT is widely used in solar inverters, EVs (electrical vehicles), and HVDC (high voltage, direct current) systems. This IGBT is able to hold a voltage of 1200 V at its Collector-Emitter junction. It also has a Gate-Emitter voltage to ensure situation status and the maximum Collector current would be 80 A @25 ℃.

FDP2D3N10C IGBT Features

• High power density with Shielded gate technology

• Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A

• RoHS Compliant

• Power Density & Shielded Gate

• Low Vds spike internal snubber function.

• Low Qrr/Trr

• Low switching loss

• Good EMI performance

• Extremely Low Reverse Recovery Charge, Qrr

• High Power and Current Handling Capability

• 100% UIL Tested

• Soft recovery performance

• High-Performance Trench Technology for Extremely Low RDS(on)

• Low Gate Charge, QG = 108nC ( Typ.)

FDP2D3N10C IGBT Applications

• Server

• Telecom

• Synchronous Rectification

• Micro Solar Inverter

• Computing

• Motor Drive

• Uninterruptible Power Supplies

• Motor drives and Uninterruptible Power Supplies