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SI8410DB-T2-E1

SI8410DB-T2-E1

SI8410DB-T2-E1

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 37m Ω @ 1.5A, 4.5V ±8V 620pF @ 10V 16nC @ 8V 20V 4-UFBGA

SOT-23

SI8410DB-T2-E1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA
Number of Pins 4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 780mW Ta 1.8W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 37m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 16nC @ 8V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Continuous Drain Current (ID) 5.7A
Threshold Voltage 850mV
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.983040 $3.98304
10 $3.757585 $37.57585
100 $3.544891 $354.4891
500 $3.344237 $1672.1185
1000 $3.154941 $3154.941
SI8410DB-T2-E1 Product Details

SI8410DB-T2-E1 Overview


A device's maximum input capacitance is 620pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 850mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.5V 4.5V) to reduce its overall power consumption.

SI8410DB-T2-E1 Features


a continuous drain current (ID) of 5.7A
a threshold voltage of 850mV
a 20V drain to source voltage (Vdss)


SI8410DB-T2-E1 Applications


There are a lot of Vishay Siliconix
SI8410DB-T2-E1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters

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