FDP6670AL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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FDP6670AL Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Published
2003
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
Through Hole
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
68W Tc
Element Configuration
Single
Power Dissipation
68W
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2440pF @ 15V
Current - Continuous Drain (Id) @ 25°C
80A Ta
Gate Charge (Qg) (Max) @ Vgs
33nC @ 5V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
80A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Nominal Vgs
1.9 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.234338
$0.234338
10
$0.221074
$2.21074
100
$0.208560
$20.856
500
$0.196755
$98.3775
1000
$0.185618
$185.618
FDP6670AL Product Details
FDP6670AL Description
FDP6670AL is a type of N-channel logic level PowerTrench MOSFET provided by ON Semiconductor optimized for faster switching speed and lower gate charge compared with other MOSFETs with comparable RDS(ON) specifications. Based on its specific features, it is well suited for DC/DC converters with higher overall efficiency through either synchronous or conventional switching PWM controllers.