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FDP6670AL

FDP6670AL

FDP6670AL

ON Semiconductor

FDP6670AL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDP6670AL Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Operating Temperature -65°C~175°C TJ
Packaging Tube
Published 2003
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 68W Tc
Element Configuration Single
Power Dissipation 68W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2440pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.9 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.234338 $0.234338
10 $0.221074 $2.21074
100 $0.208560 $20.856
500 $0.196755 $98.3775
1000 $0.185618 $185.618
FDP6670AL Product Details

FDP6670AL Description


FDP6670AL is a type of N-channel logic level PowerTrench MOSFET provided by ON Semiconductor optimized for faster switching speed and lower gate charge compared with other MOSFETs with comparable RDS(ON) specifications. Based on its specific features, it is well suited for DC/DC converters with higher overall efficiency through either synchronous or conventional switching PWM controllers.



FDP6670AL Features


  • Low gate charge

  • Low RDS(ON)

  • Fast switching speed

  • High-performance trench technology



FDP6670AL Applications


  • DC/DC converter


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