FDP7030L

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Manufacturer part number:FDP7030L

Manufacturer:ON Semiconductor

Description:FDP7030L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDP7030L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Operating Temperature	-65°C~175°C TJ
Packaging	Tube
Published	2003
Series	PowerTrench®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	68W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2440pF @ 15V
Current - Continuous Drain (Id) @ 25°C	80A Ta
Gate Charge (Qg) (Max) @ Vgs	33nC @ 5V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$2.13000	$2.13
500	$2.1087	$1054.35
1000	$2.0874	$2087.4
1500	$2.0661	$3099.15
2000	$2.0448	$4089.6
2500	$2.0235	$5058.75

FDP7030L Description

FDP7030L is a 30v N-Channel Logic Level Enhancement Mode Field Effect Transistor. The transistor FDP7030L is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. The onsemi FDP7030L is particularly suited for low voltage applications such as DC/DC converters and high-efficiency switching circuits where fast switching. low in-line power loss and resistance to transients are needed.

FDP7030L Features

100A, 30V. RDS(on) = [email protected] VGS = 10V

RDS(on) = [email protected] VGS = 5 V

Critical DC electrical parameters are specified at elevated temperatures.
A rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High-density cell design for extremely low RDS(on)
175°C maximum junction temperature rating