DMN3020LK3-13

new-10%

Manufacturer part number:DMN3020LK3-13

Manufacturer:Diodes Incorporated

Description:MOSFET N-CH 30V 11.3A DPAK

Case Package:SOT-23

Datasheet:DMN3020LK3-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.17W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	2.9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	20m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	608pF @ 15V
Current - Continuous Drain (Id) @ 25°C	11.3A Ta
Gate Charge (Qg) (Max) @ Vgs	6.3nC @ 4.5V
Rise Time	3.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	11.3A
JEDEC-95 Code	TO-252AA
Gate to Source Voltage (Vgs)	12V
Drain-source On Resistance-Max	0.02Ohm
Drain to Source Breakdown Voltage	30V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant