FDPC8016S

new-10%

Manufacturer part number:FDPC8016S

Manufacturer:ON Semiconductor

Description:FDPC8016S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDPC8016S Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	207.7333mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	42W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13 ns
Power - Max	2.1W 2.3W
FET Type	2 N-Channel (Dual) Asymmetrical
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2375pF @ 13V
Current - Continuous Drain (Id) @ 25°C	20A 35A
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	4ns
Fall Time (Typ)	3 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	75A
Avalanche Energy Rating (Eas)	73 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	5.1mm
Width	6.1mm
RoHS Status	ROHS3 Compliant