TPS1120DR

new-10%

Manufacturer part number:TPS1120DR

Manufacturer:Texas Instruments

Description:MOSFET 2P-CH 15V 1.17A 8-SOIC

Case Package:SOT-23

Datasheet:TPS1120DR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Gold
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Cut Tape (CT)
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Subcategory	Other Transistors
Voltage - Rated DC	-15V
Max Power Dissipation	840mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-1.17A
Base Part Number	TPS1120
Pin Count	8
Number of Elements	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	840mW
Turn On Delay Time	4.5 ns
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs	5.45nC @ 10V
Rise Time	10ns
Fall Time (Typ)	10 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	1.17A
Gate to Source Voltage (Vgs)	2V
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	15V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	1.75mm
Length	4.9mm
Width	3.91mm
Thickness	1.58mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free