FDPF20N50

new-10%

FDPF20N50

Manufacturer part number:FDPF20N50

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 10A, 10V ±30V 3120pF @ 25V 59.5nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:FDPF20N50 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Factory Lead Time	6 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	UniFET™
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	230MOhm
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	38.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	38.5W
Case Connection	ISOLATED
Turn On Delay Time	95 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	230m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	59.5nC @ 10V
Rise Time	375ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	20A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	80A
Height	16.07mm
Length	10.36mm
Width	4.9mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free