CSD17555Q5A

new-10%

Manufacturer part number:CSD17555Q5A

Manufacturer:Texas Instruments

Description:MOSFET 30V N-ch NexFET Pwr MOSFET

Case Package:SOT-23

Datasheet:CSD17555Q5A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	NexFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD17555
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	3W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4650pF @ 15V
Current - Continuous Drain (Id) @ 25°C	24A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 4.5V
Rise Time	18ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.3 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	100A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	24A
Drain-source On Resistance-Max	0.0034Ohm
DS Breakdown Voltage-Min	30V
Length	4.9mm
Width	6mm
Thickness	1mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead