FDR840P

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Manufacturer part number:FDR840P

Manufacturer:ON Semiconductor

Description:FDR840P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDR840P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-LSOP (0.130, 3.30mm Width)
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2000
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Current Rating	-10A
Power Dissipation-Max	1.8W Ta
Power Dissipation	1.8W
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	12m Ω @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4481pF @ 10V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	60nC @ 4.5V
Rise Time	15ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	10A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
RoHS Status	RoHS Compliant
Lead Free	Lead Free

Quantity	Unit Price	Ext. Price
1	$0.75000	$0.75
500	$0.7425	$371.25
1000	$0.735	$735
1500	$0.7275	$1091.25
2000	$0.72	$1440
2500	$0.7125	$1781.25

FDR840P Description

FDR840P is a 2.5v P-Channel Specified PowerTrench MOSFET. This P-Channel 2.5V specified MOSFET FDR840P uses a rugged gate Power Trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDR840P is in the SSOT-8 package with 1.8W power dissipation.