FDS5682 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDS5682 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SOIC
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
21mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.5A Ta
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.384069
$0.384069
10
$0.362329
$3.62329
100
$0.341820
$34.182
500
$0.322472
$161.236
1000
$0.304218
$304.218
FDS5682 Product Details
FDS5682 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS and fast switching speed.
FDS5682 Features
? rDS(ON) = 21m?, VGS = 10V, ID = 7.5A
? rDS(ON) = 26.5m?, VGS = 4.5V, ID = 6.7A
? High performance trench technology for extremely low