FDS6910        Description

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FDS6910           Features

7.5A, 30V

?RDS(ON) = 13 mΩ @ VGS = 10V

?RDS(ON) = 17 mΩ @ VGS = 4.5V

Fast switching speed

Low gate charge

High performance trench technology for extremely low RDS(ON)

High power and current handling capability

FDS6910           Applications

This product is general usage and suitable for many different applications.