FDS8812NZ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance. This device is well suited for Power Management and loads switching applications common in Notebook Computers and Portable Battery Packs.
FDS8812NZ Features
Max rDS(on) = 4.0m|? at VGS = 10V, ID = 20A
?Max rDS(on) = 4.9m|? at VGS = 4.5V, ID =18A
?HBM ESD protection level of 6.4kV typical (note 3)
?High performance trench technology for extremely low rDS(on)
?High power and current handling capability
?RoHS compliant
