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FDS8812NZ

  • FDS8812NZ
  • FDS8812NZ

FDS8812NZ

FDS8812NZ

ON Semiconductor

FDS8812NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDS8812NZ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Supplier Device Package 8-SOIC
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6925pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.331876 $8.331876
10 $7.860260 $78.6026
100 $7.415341 $741.5341
500 $6.995604 $3497.802
1000 $6.599626 $6599.626
FDS8812NZ Product Details

FDS8812NZ Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench? process that has been specially tailored to minimize the on-state resistance. This device is well suited for Power Management and loads switching applications common in Notebook Computers and Portable Battery Packs.



FDS8812NZ Features

Max rDS(on) = 4.0m|? at VGS = 10V, ID = 20A

?Max rDS(on) = 4.9m|? at VGS = 4.5V, ID =18A

?HBM ESD protection level of 6.4kV typical (note 3)

?High performance trench technology for extremely low rDS(on)

?High power and current handling capability

?RoHS compliant


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