SI3446ADV-T1-E3

new-10%

Manufacturer part number:SI3446ADV-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 6.0A 3.2W

Case Package:SOT-23

Datasheet:SI3446ADV-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	37MOhm
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	2W Ta 3.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2W
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	37m Ω @ 5.8A, 4.5V
Vgs(th) (Max) @ Id	1.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	86ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	5.8A
Drain to Source Breakdown Voltage	20V
Nominal Vgs	1.8 V
Height	1mm
Length	3.05mm
Width	1.65mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free