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FDS8958A

  • FDS8958A
  • FDS8958A

FDS8958A

FDS8958A

ON Semiconductor

FDS8958A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

FDS8958A Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
Resistance 28mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 900mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 5A
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 13ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 54 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.9 V
Height 1.5mm
Length 5mm
Width 4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $0.37558 $0.75116
5,000 $0.35107 $1.75535
12,500 $0.33881 $4.06572
25,000 $0.33212 $8.303
FDS8958A Product Details

FDS8958A Description


The FDS8958A is a 30V Dual N-channel and P-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.



FDS8958A Features


  • Fast switching speed

  • High power and handling capability in a widely used surface mount package

  • · Q1: N-Channel

  • 7.0A, 30V RDS(on) = 0.028W @ VGS = 10V

  • RDS(on) = 0.040W @ VGS = 4.5V

  • · Q2: P-Channel

  • -5A, -30V RDS(on) = 0.052W @ VGS = -10V

  • RDS(on) = 0.080W @ VGS = -4.5V



FDS8958A Applications


  • Battery powered applications 


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