SI5902BDC-T1-GE3

new-10%

Manufacturer part number:SI5902BDC-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 30V 4A 1206-8

Case Package:SOT-23

Datasheet:SI5902BDC-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Supplier Device Package	1206-8 ChipFET™
Weight	84.99187mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2010
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Resistance	65mOhm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	3.12W
Base Part Number	SI5902
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Power Dissipation	1.5W
Turn On Delay Time	4 ns
Power - Max	3.12W
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	220pF @ 15V
Current - Continuous Drain (Id) @ 25°C	4A
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Drain to Source Voltage (Vdss)	30V
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	3.7A
Threshold Voltage	1.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Input Capacitance	220pF
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Drain to Source Resistance	53mOhm
Rds On Max	65 mΩ
Nominal Vgs	1.5 V
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free