Welcome to Hotenda.com Online Store!

logo
userjoin
Home

FDS9400A

FDS9400A

FDS9400A

ON Semiconductor

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 130m Ω @ 1A, 10V ±25V 205pF @ 15V 3.5nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)

SOT-23

FDS9400A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 230.4mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 130MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -3.4A
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 4.5 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.4A Ta
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 5V
Rise Time 12.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 3.4A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -1.8 V
Height 1.575mm
Length 4.9mm
Width 3.9mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
FDS9400A Product Details

FDS9400A Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 205pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -30V, and this device has a drainage-to-source breakdown voltage of -30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 11 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is -1.8V, which means that it will not activate any of its functions when its threshold voltage reaches -1.8V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

FDS9400A Features


a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 11 ns
a threshold voltage of -1.8V
a 30V drain to source voltage (Vdss)


FDS9400A Applications


There are a lot of ON Semiconductor
FDS9400A applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News