FDT86244

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Manufacturer part number:FDT86244

Manufacturer:ON Semiconductor

Description:FDT86244 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDT86244 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	9 Weeks
Lifecycle Status	ACTIVE (Last Updated: 12 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Weight	250.2mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Number of Elements	1
Power Dissipation-Max	2.2W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.2W
Case Connection	DRAIN
Turn On Delay Time	5.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	128m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	395pF @ 75V
Current - Continuous Drain (Id) @ 25°C	2.8A Tc
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Rise Time	1.3ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	2.4 ns
Turn-Off Delay Time	9.8 ns
Continuous Drain Current (ID)	2.8A
Threshold Voltage	3.1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Nominal Vgs	3.1 V
Feedback Cap-Max (Crss)	5 pF
Height	1.7mm
Length	3.7mm
Width	6.7mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free