FDV302P Description

Our exclusive high cell density DMOS technology is used to make the FDV302P transistor. This extremely dense technique is specifically designed to reduce on-state resistance. This device was created specifically to replace digital transistors in low-voltage applications. This single P-channel FET can replace numerous digital transistors with various bias resistors, such as the DTCx and DCDx series, because bias resistors are not required.

FDV302P Features

• Gate drive needs are very minimal, allowing direct operation in 3V circuits. VGS(th) < 1.5V.

• For ESD toughness, use a Gate-Source Zener.

• Human Body Model >6kV

• SOT-23 surface mount package is a compact industry standard.

• One DMOS FET can replace multiple PNP digital transistors (DTCx and DCDx).

FDV302P Applications

FDV302P is intended for general use and can be used in a variety of situations.