FDY300NZ

new-10%

Manufacturer part number:FDY300NZ

Manufacturer:ON Semiconductor

Description:FDY300NZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDY300NZ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 23 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	700MOhm
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Number of Elements	1
Power Dissipation-Max	625mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	625mW
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 10V
Current - Continuous Drain (Id) @ 25°C	600mA Ta
Gate Charge (Qg) (Max) @ Vgs	1.1nC @ 4.5V
Rise Time	8ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	8 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.6A
Drain to Source Breakdown Voltage	20V
Dual Supply Voltage	20V
Nominal Vgs	1 V
Height	780μm
Length	1.7mm
Width	980μm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free