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STP10NK60ZFP

STP10NK60ZFP

STP10NK60ZFP

STMicroelectronics

STP10NK60ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STP10NK60ZFP Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 750mOhm
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Base Part Number STP10
Pin Count 3
Number of Elements 1
Power Dissipation-Max 35W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection ISOLATED
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.40000 $3.4
50 $2.77840 $138.92
100 $2.51850 $251.85
500 $1.99868 $999.34
1,000 $1.68683 $1.68683
2,500 $1.58288 $3.16576
5,000 $1.53090 $7.6545
STP10NK60ZFP Product Details

STP10NK60ZFP Description

STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed with SuperMESHTM technology, which optimizes the strip-based PowerMESHTM layout. Furthermore, this MOSFET is designed to ensure a high degree of dv/dt capability for applications that require a significant reduction in resistance. A lower power dissipation and improved gate charge meet the challenges of today's energy-efficient building code.


STP10NK60ZFP Features

  • Zener-protected

  • Extremely high dv/dt capability

  • 100% avalanche tested

  • Gate charge minimized


STP10NK60ZFP Applications

  • Inverter Circuits

  • DC-DC Converters

  • Inverters

  • Speed control of Motors

  • Battery Charger Circuits

  • Motor Controllers


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