STP10NK60ZFP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STP10NK60ZFP Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
750mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
10A
Base Part Number
STP10
Pin Count
3
Number of Elements
1
Power Dissipation-Max
35W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
35W
Case Connection
ISOLATED
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
750m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
70nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
30 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
10A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Height
9.3mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.40000
$3.4
50
$2.77840
$138.92
100
$2.51850
$251.85
500
$1.99868
$999.34
STP10NK60ZFP Product Details
STP10NK60ZFP Description
STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed with SuperMESHTM technology, which optimizes the strip-based PowerMESHTM layout. Furthermore, this MOSFET is designed to ensure a high degree of dv/dt capability for applications that require a significant reduction in resistance. A lower power dissipation and improved gate charge meet the challenges of today's energy-efficient building code.