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IRFF220

IRFF220

IRFF220

Infineon

IRFF220 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon stock available on our website

SOT-23

IRFF220 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
EU RoHS Not Compliant
ECCN (US) EAR99
HTS 8542.31.00.01
Automotive No
PPAP No
Category Power MOSFET
Process Technology HEXFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 3.5
Maximum Drain Source Resistance (mOhm) 850@10V
Typical Gate Charge @ Vgs (nC) 14.3(Max)@10V
Typical Gate Charge @ 10V (nC) 14.3(Max)
Typical Input Capacitance @ Vds (pF) 260@25V
Maximum Power Dissipation (mW) 20000
Typical Fall Time (ns) 50(Max)
Typical Rise Time (ns) 50(Max)
Typical Turn-Off Delay Time (ns) 50(Max)
Typical Turn-On Delay Time (ns) 40(Max)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 4.54(Max)
PCB changed 3
Standard Package Name TO-205-AF
Supplier Package TO-39
Lead Shape Through Hole
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
Diameter 9.22(Max)

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