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FDZ298N

FDZ298N

FDZ298N

ON Semiconductor

FDZ298N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDZ298N Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 9-WFBGA
Supplier Device Package 9-BGA (1.5x1.6)
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.7W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 27mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
FDZ298N Product Details

FDZ298N Description


FDZ298N combines Xiantong's advanced 2.5V dedicated PowerTritch process with state-of-the-art BGA packaging to minimize PCB space and RDS (on). This BGA MOSFET represents a breakthrough in packaging technology, enabling the device to combine excellent heat transfer characteristics, high current handling capacity, ultra-low package, low gate charge and low RDS (conduction).


FDZ298N  Features


? 6 A, 20 V RDS(ON) = 27 m? @ VGS = 4.5 V

 RDS(ON) = 39 m? @ VGS = 2.5 V

? Occupies only 2.25 mm2 of PCB area.

Less than 50% of the area of a SSOT-6

? Ultra-thin package: less than 0.80 mm height when

mounted to PCB

? Outstanding thermal transfer characteristics:

4 times better than SSOT-6

? Ultra-low Qg x RDS(ON) figure-of-merit

? High power and current handling capability.

 

FDZ298N   Applications


? Battery management

? Battery protection


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