FDZ298N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDZ298N Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
9-WFBGA
Supplier Device Package
9-BGA (1.5x1.6)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
1.7W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
27mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
680pF @ 10V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
FDZ298N Product Details
FDZ298N Description
FDZ298N combines Xiantong's advanced 2.5V dedicated PowerTritch process with state-of-the-art BGA packaging to minimize PCB space and RDS (on). This BGA MOSFET represents a breakthrough in packaging technology, enabling the device to combine excellent heat transfer characteristics, high current handling capacity, ultra-low package, low gate charge and low RDS (conduction).
FDZ298N Features
? 6 A, 20 V RDS(ON) = 27 m? @ VGS = 4.5 V
RDS(ON) = 39 m? @ VGS = 2.5 V
? Occupies only 2.25 mm2 of PCB area.
Less than 50% of the area of a SSOT-6
? Ultra-thin package: less than 0.80 mm height when