FDZ3N513ZT

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FDZ3N513ZT

Manufacturer part number:FDZ3N513ZT

Manufacturer:ON Semiconductor

Description:MOSFET 30V Integrated NMOS and Shottky Diode

Case Package:SOT-23

Datasheet:FDZ3N513ZT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-UFBGA, WLCSP
Number of Pins	4
Weight	42mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~125°C TJ
Packaging	Tape & Reel (TR)
Published	2016
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	ESD PROTECTION
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	DEPLETION MODE
Power Dissipation	1W
Turn On Delay Time	3.1 ns
Forward Current	1.1A
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	462m Ω @ 300mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	85pF @ 15V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	1nC @ 4.5V
Rise Time	1.9ns
Drive Voltage (Max Rds On,Min Rds On)	3.2V 4.5V
Vgs (Max)	+5.5V, -0.3V
Fall Time (Typ)	2.7 ns
Turn-Off Delay Time	9.6 ns
Reverse Recovery Time	29 ns
Continuous Drain Current (ID)	1.1A
Threshold Voltage	700mV
Peak Reverse Current	300μA
Max Repetitive Reverse Voltage (Vrrm)	25V
Gate to Source Voltage (Vgs)	5.5V
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	30V
FET Feature	Schottky Diode (Body)
Nominal Vgs	700 mV
Feedback Cap-Max (Crss)	25 pF
Height	332μm
Length	1mm
Width	1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant