FDZ663P

new-10%

Manufacturer part number:FDZ663P

Manufacturer:ON Semiconductor

Description:MOSFET PCh 1.5 V SPECIFIED PowerTrench MOSFET

Case Package:SOT-23

Datasheet:FDZ663P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, WLCSP
Number of Pins	4
Weight	67mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.3W
Turn On Delay Time	4.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	134m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	525pF @ 10V
Current - Continuous Drain (Id) @ 25°C	2.7A Ta
Gate Charge (Qg) (Max) @ Vgs	8.2nC @ 4.5V
Rise Time	6.2ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	67 ns
Continuous Drain Current (ID)	2.7A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
Feedback Cap-Max (Crss)	80 pF
Height	150μm
Length	800μm
Width	800μm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free