FGB40N60SM

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Manufacturer part number:FGB40N60SM

Manufacturer:ON Semiconductor

Description:FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGB40N60SM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.31247g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	349W
Terminal Form	GULL WING
Base Part Number	FGB40N60
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Rise Time-Max	28ns
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	349W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	80A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.3V
Max Breakdown Voltage	600V
Turn On Time	37 ns
Test Condition	400V, 40A, 6 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 40A
Turn Off Time-Nom (toff)	132 ns
IGBT Type	Field Stop
Gate Charge	119nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	12ns/92ns
Switching Energy	870μJ (on), 260μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	17ns
Height	4.83mm
Length	10.67mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free