FGH30N6S2D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
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FGH30N6S2D Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Supplier Device Package
TO-247-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
600V
Max Power Dissipation
167W
Current Rating
45A
Polarity
NPN
Element Configuration
Single
Power Dissipation
167W
Input Type
Standard
Power - Max
167W
Rise Time
17ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
45A
Reverse Recovery Time
46 ns
Collector Emitter Breakdown Voltage
600V
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
45A
Collector Emitter Saturation Voltage
2.5V
Test Condition
390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 12A
Gate Charge
23nC
Current - Collector Pulsed (Icm)
108A
Td (on/off) @ 25°C
6ns/40ns
Switching Energy
55μJ (on), 100μJ (off)
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
FGH30N6S2D Product Details
FGH30N6S2D Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, and Low Plateau Voltage SMPS II IGBTs combine the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times, and UIS capability are essential.