FGL35N120FTDTU

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Manufacturer part number:FGL35N120FTDTU

Manufacturer:ON Semiconductor

Description:FGL35N120FTDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGL35N120FTDTU Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Number of Pins	3
Weight	6.756g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	368W
Element Configuration	Single
Input Type	Standard
Power - Max	368W
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	70A
Reverse Recovery Time	337 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Test Condition	600V, 35A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 35A
IGBT Type	Trench Field Stop
Gate Charge	210nC
Current - Collector Pulsed (Icm)	105A
Td (on/off) @ 25°C	34ns/172ns
Switching Energy	2.5mJ (on), 1.7mJ (off)
Gate-Emitter Voltage-Max	25V
Gate-Emitter Thr Voltage-Max	7.5V
Height	26.4mm
Length	20.2mm
Width	5.2mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free