FJN598JABU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
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FJN598JABU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
FJN598
Power - Max
150mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0)
100μA @ 5V
Voltage - Cutoff (VGS off) @ Id
600mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
20V
Current Drain (Id) - Max
1mA
FJN598JABU Product Details
FJN598JABU Description
FJN598JABU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FJN598JABU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor FJN598JABU has the common source configuration.