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FJN598JBTA

FJN598JBTA

FJN598JBTA

ON Semiconductor

FJN598JBTA datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

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FJN598JBTA Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number FJN598
Power - Max 150mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0) 100μA @ 5V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 20V
Current Drain (Id) - Max 1mA
FJN598JBTA Product Details

FJN598JBTA Description


FJN598JBTA is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. The FJN598JBTA junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits.



FJN598JBTA Features


Excellent voltage characteristic

Excellent transient characteristic

Gate-drain voltage of -20 V

Junction temperature of 150 °C



FJN598JBTA Applications


Audio, telephone capacitor microphones


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