FJN598JBTA datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
FJN598JBTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
FJN598
Power - Max
150mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0)
100μA @ 5V
Voltage - Cutoff (VGS off) @ Id
600mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
20V
Current Drain (Id) - Max
1mA
FJN598JBTA Product Details
FJN598JBTA Description
FJN598JBTA is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. The FJN598JBTA junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits.