FJPF5027RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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FJPF5027RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
800V
Max Power Dissipation
40W
Current Rating
3A
Frequency
15MHz
Base Part Number
FJPF5027
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
15MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 200mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage
800V
Transition Frequency
15MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
1.1kV
Emitter Base Voltage (VEBO)
7V
hFE Min
10
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$11.450640
$11.45064
10
$10.802491
$108.02491
100
$10.191029
$1019.1029
500
$9.614178
$4807.089
1000
$9.069979
$9069.979
FJPF5027RTU Product Details
FJPF5027RTU Overview
In this device, the DC current gain is 15 @ 200mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.15MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
FJPF5027RTU Features
the DC current gain for this device is 15 @ 200mA 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 300mA, 1.5A the emitter base voltage is kept at 7V the current rating of this device is 3A a transition frequency of 15MHz
FJPF5027RTU Applications
There are a lot of ON Semiconductor FJPF5027RTU applications of single BJT transistors.