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FJPF5027RTU

FJPF5027RTU

FJPF5027RTU

ON Semiconductor

FJPF5027RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF5027RTU Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC 800V
Max Power Dissipation 40W
Current Rating 3A
Frequency 15MHz
Base Part Number FJPF5027
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 15MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage 800V
Transition Frequency 15MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 7V
hFE Min 10
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $11.450640 $11.45064
10 $10.802491 $108.02491
100 $10.191029 $1019.1029
500 $9.614178 $4807.089
1000 $9.069979 $9069.979
FJPF5027RTU Product Details

FJPF5027RTU Overview


In this device, the DC current gain is 15 @ 200mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 7V to achieve high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.15MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

FJPF5027RTU Features


the DC current gain for this device is 15 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz

FJPF5027RTU Applications


There are a lot of ON Semiconductor FJPF5027RTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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