DCP51-16-13 Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Emitter base voltages of -5V can achieve high levels of efficiency.There is a transition frequency of 200MHz in the part.Breakdown input voltage is 45V volts.Collector current can be as low as 1A volts at its maximum.

DCP51-16-13 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 200MHz

DCP51-16-13 Applications

There are a lot of Diodes Incorporated DCP51-16-13 applications of single BJT transistors.

• Inverter
• Driver
• Interface
• Muting