FJPF5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF5200RTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE
Case Connection
ISOLATED
Power - Max
50W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max)
250V
Current - Collector (Ic) (Max)
17A
Transition Frequency
30MHz
Frequency - Transition
30MHz
RoHS Status
RoHS Compliant
FJPF5200RTU Product Details
FJPF5200RTU Overview
In this device, the DC current gain is 55 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.30MHz is present in the transition frequency.The device has a 250V maximal voltage - Collector Emitter Breakdown.
FJPF5200RTU Features
the DC current gain for this device is 55 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A a transition frequency of 30MHz
FJPF5200RTU Applications
There are a lot of ON Semiconductor FJPF5200RTU applications of single BJT transistors.