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FJPF5200RTU

FJPF5200RTU

FJPF5200RTU

ON Semiconductor

FJPF5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF5200RTU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Power - Max 50W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Voltage - Collector Emitter Breakdown (Max) 250V
Current - Collector (Ic) (Max) 17A
Transition Frequency 30MHz
Frequency - Transition 30MHz
RoHS Status RoHS Compliant
FJPF5200RTU Product Details

FJPF5200RTU Overview


In this device, the DC current gain is 55 @ 1A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 3V @ 800mA, 8A.30MHz is present in the transition frequency.The device has a 250V maximal voltage - Collector Emitter Breakdown.

FJPF5200RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
a transition frequency of 30MHz

FJPF5200RTU Applications


There are a lot of ON Semiconductor FJPF5200RTU applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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