2SA1576AT106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SA1576AT106Q Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Contact Plating
Copper, Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2004
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-50V
Max Power Dissipation
200mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-150mA
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1576
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power - Max
200mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
140MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
-50V
Voltage - Collector Emitter Breakdown (Max)
50V
Transition Frequency
140MHz
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
-60V
Emitter Base Voltage (VEBO)
-6V
hFE Min
120
Continuous Collector Current
-150mA
VCEsat-Max
0.5 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.067520
$0.06752
500
$0.049647
$24.8235
1000
$0.041373
$41.373
2000
$0.037956
$75.912
5000
$0.035473
$177.365
10000
$0.032998
$329.98
15000
$0.031913
$478.695
50000
$0.031380
$1569
2SA1576AT106Q Product Details
2SA1576AT106Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.This device can take an input voltage of 50V volts before it breaks down.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.Maximum collector currents can be below 150mA volts.
2SA1576AT106Q Features
the DC current gain for this device is 120 @ 1mA 6V the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at -6V the current rating of this device is -150mA a transition frequency of 140MHz
2SA1576AT106Q Applications
There are a lot of ROHM Semiconductor 2SA1576AT106Q applications of single BJT transistors.