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2SA1576AT106Q

2SA1576AT106Q

2SA1576AT106Q

ROHM Semiconductor

2SA1576AT106Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SA1576AT106Q Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -150mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1576
Pin Count 3
Number of Elements 1
Element Configuration Single
Power - Max 200mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 140MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage -50V
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 140MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -6V
hFE Min 120
Continuous Collector Current -150mA
VCEsat-Max 0.5 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.067520 $0.06752
500 $0.049647 $24.8235
1000 $0.041373 $41.373
2000 $0.037956 $75.912
5000 $0.035473 $177.365
10000 $0.032998 $329.98
15000 $0.031913 $478.695
50000 $0.031380 $1569
2SA1576AT106Q Product Details

2SA1576AT106Q Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 5mA, 50mA.A -150mA continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -6V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 140MHz in the part.This device can take an input voltage of 50V volts before it breaks down.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.Maximum collector currents can be below 150mA volts.

2SA1576AT106Q Features


the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at -6V
the current rating of this device is -150mA
a transition frequency of 140MHz

2SA1576AT106Q Applications


There are a lot of ROHM Semiconductor 2SA1576AT106Q applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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