FJX1182YTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of -100mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at -5V for high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 200MHz.Input voltage breakdown is available at 30V volts.A maximum collector current of 500mA volts can be achieved.
FJX1182YTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
FJX1182YTF Applications
There are a lot of ON Semiconductor FJX1182YTF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
