FJX733YTF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 1mA 6V.A collector emitter saturation voltage of -180mV ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.Emitter base voltages of -5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -150mA current rating.The part has a transition frequency of 180MHz.An input voltage of 50V volts is the breakdown voltage.A maximum collector current of 150mA volts can be achieved.

FJX733YTF Features

the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -180mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 180MHz

FJX733YTF Applications

There are a lot of ON Semiconductor FJX733YTF applications of single BJT transistors.

• Interface
• Driver
• Inverter
• Muting