SBC856BWT1G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at -5V for high efficiency.100MHz is present in the transition frequency.During maximum operation, collector current can be as low as 100mA volts.

SBC856BWT1G Features

the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz

SBC856BWT1G Applications

There are a lot of ON Semiconductor SBC856BWT1G applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting