FMBM5551

new-10%

Manufacturer part number:FMBM5551

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - BJT SSOT6 NPN General Purpose Amplifier

Case Package:SOT-23

Datasheet:FMBM5551 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	6 Weeks
Lifecycle Status	ACTIVE (Last Updated: 5 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	160V
Max Power Dissipation	700mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	600mA
Frequency	300MHz
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	FMBM5551
Qualification Status	Not Qualified
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Power Dissipation	700mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	300MHz
Transistor Type	2 NPN (Dual)
Collector Emitter Voltage (VCEO)	160V
Max Collector Current	600mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage	160V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	150mV
Max Breakdown Voltage	160V
Collector Base Voltage (VCBO)	180V
Emitter Base Voltage (VEBO)	6V
hFE Min	80
Height	1.12mm
Length	3mm
Width	1.68mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free