FMBS2383 Overview
In this device, the DC current gain is 80 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 120MHz.Breakdown input voltage is 160V volts.A maximum collector current of 800mA volts is possible.
FMBS2383 Features
the DC current gain for this device is 80 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz
FMBS2383 Applications
There are a lot of ON Semiconductor FMBS2383 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
