FF225R12ME4PBPSA1

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Manufacturer part number:FF225R12ME4PBPSA1

Manufacturer:Infineon Technologies

Description:FF225R12ME4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:FF225R12ME4PBPSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Operating Temperature	-40°C~150°C TJ
Published	2002
Series	EconoDUAL™ 3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Configuration	Half Bridge
Power - Max	20mW
Input	Standard
Current - Collector Cutoff (Max)	3mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	450A
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 225A
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Input Capacitance (Cies) @ Vce	13nF @ 25V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$160.425169	$160.425169
10	$155.150066	$1551.50066
25	$154.071565	$3851.789125
50	$153.000561	$7650.02805
100	$149.853635	$14985.3635
500	$139.139866	$69569.933

FF225R12ME4PBPSA1 Description

FF225R12ME4PBPSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF225R12ME4PBPSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FF225R12ME4PBPSA1 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FF225R12ME4PBPSA1 Applications

ISM applications

DC large signal applications

Power factor correction

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