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FPF2C110BI07AS2

FPF2C110BI07AS2

FPF2C110BI07AS2

ON Semiconductor

FPF2C110BI07AS2 datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website

SOT-23

FPF2C110BI07AS2 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 9 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 30-DIP Module
Weight 45g
Operating Temperature -40°C~150°C
Published 2016
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Configuration Half Bridge
Power - Max 300W
Input Standard
Collector Emitter Voltage (VCEO) 2.3V
Current - Collector Cutoff (Max) 250μA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 40A
Isolation Voltage 2.5kV
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
NTC Thermistor Yes
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $387.242000 $387.242
10 $365.322642 $3653.22642
100 $344.644001 $34464.4001
500 $325.135850 $162567.925
1000 $306.731934 $306731.934
FPF2C110BI07AS2 Product Details

FPF2C110BI07AS2 Description


The FPF2C110BI07AS2  is a Fairchild's Boost and H-Bridge module designed for a power stage that needs a more compact design. 



FPF2C110BI07AS2 Features


  • Boost Stage

-Dual Boost Topology

- SiC Boost Diode

- Low R(os/ON) Boost Switch

- Low Vp and High Voltage Bypass Diode

  • Inverter Stage

- H-bridge Topology

- High-Speed IGBT and Fast Recovery FWD

-Integrated DC-capacitor for Boost and Inverter

  • Temperature Sensor



FPF2C110BI07AS2 Applicaitons


  • Solar Inverter


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